InGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy
Open Access
- 1 May 2021
- journal article
- research article
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 1907 (1), 012065
- https://doi.org/10.1088/1742-6596/1907/1/012065
Abstract
A 100 periods In0.53Ga0.47As/In0.52Al0.48As quantum well structure was grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The XRD results of ternary alloy InGaAs and InAlAs films show that the indium component is similar to the designed structure. In addition, the XRD results show that the In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structure is consistent with the designed structure. The PL spectrum of In0.52Ga0.48As/In0.53Al0.47As quantum well structures is ~1470 nm at room temperature.This publication has 10 references indexed in Scilit:
- Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)Journal of Crystal Growth, 2017
- A review of InP/InAlAs/InGaAs based transistors for high frequency applicationsSuperlattices and Microstructures, 2015
- X-Ray Diffraction and Cation Distribution Studies in Zinc-Substituted Nickel Ferrite NanoparticlesJournal of Superconductivity and Novel Magnetism, 2013
- Structural and optical properties of vacuum evaporated CdxZn1−xS thin filmsOptical Materials, 2004
- Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum WellJapanese Journal of Applied Physics, 2001
- Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applicationsApplied Physics Letters, 1998
- Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescenceJournal of Applied Physics, 1998
- Optical properties of high-quality InGaAs/InAlAs multiple quantum wellsJournal of Applied Physics, 1991
- High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1987
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983