A review of InP/InAlAs/InGaAs based transistors for high frequency applications
- 1 October 2015
- journal article
- review article
- Published by Elsevier BV in Superlattices and Microstructures
- Vol. 86, 1-19
- https://doi.org/10.1016/j.spmi.2015.06.048
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectricsMicroelectronics Reliability, 2013
- In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursorsApplied Physics Letters, 2008
- Growth of InP high electron mobility transistor structures with Te dopingJournal of Crystal Growth, 2005
- Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistorsSolid-State Electronics, 2002
- Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTsJournal of Crystal Growth, 2000
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETsIEEE Electron Device Letters, 1998
- Unified apparent bandgap narrowing in n- and p-type siliconSolid-State Electronics, 1992
- A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxyJournal of Crystal Growth, 1991
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976