Geometry Dependence of Total-Dose Effects in Bulk FinFETs
- 2 December 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 61 (6), 2951-2958
- https://doi.org/10.1109/tns.2014.2367157
Abstract
The total ionizing dose (TID) response of bulk FinFETs is investigated for various geometry variations, such as fin width, channel length, and fin pitch. The buildup of oxide-trapped charge in the shallow trench isolation turns on a parasitic transistor, leading to increased leakage current (higher IOFF.) The TID-induced degradation increases with decreasing fin width. Transistors with longer channels degrade less than those with shorter channels. Transistors with large fin pitch degrade more, compared to those with narrow fin pitch. TCAD simulations are used to analyze the buildup of trapped charge in the trench isolation oxide and its impact on the increase in leakage current. The strong influence of charge in the STI in narrow-fin transistors induces a parasitic leakage current path between the source and the drain, while in wide-fin devices, for the same amount of trapped charge in the isolation oxide, the subsurface leakage path is less effective.Keywords
This publication has 36 references indexed in Scilit:
- Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar DevicesIEEE Transactions on Nuclear Science, 2013
- Enhanced Radiation-Induced Narrow Channel Effects in Commercial ${\hbox {0.18}}~\mu$ m Bulk TechnologyIEEE Transactions on Nuclear Science, 2011
- Total Dose Effects in CMOS Trench Isolation RegionsIEEE Transactions on Nuclear Science, 2009
- Total ionizing dose effects in shallow trench isolation oxidesMicroelectronics Reliability, 2008
- High tolerance to total ionizing dose of Ω-shaped gate field-effect transistorsApplied Physics Letters, 2006
- Lateral coupling and immunity to substrate effect in ΩFET devicesSolid-State Electronics, 2006
- Radiation-induced edge effects in deep submicron CMOS transistorsIEEE Transactions on Nuclear Science, 2005
- Coupling effects and channels separation in FinFETsSolid-State Electronics, 2004
- Challenges in hardening technologies using shallow-trench isolationIEEE Transactions on Nuclear Science, 1998
- Charge-Carrier Transport Phenomena in Amorphous Si: Direct Measurement of the Drift Mobility and LifetimePhysical Review Letters, 1973