Electrolytic Shaping of Germanium and Silicon
- 1 March 1956
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 35 (2), 333-347
- https://doi.org/10.1002/j.1538-7305.1956.tb02385.x
Abstract
Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and...This publication has 8 references indexed in Scilit:
- Electrolytic Etching at Small-Angle Grain Boundaries in GermaniumPhysical Review B, 1955
- Micromachining with Virtual ElectrodesReview of Scientific Instruments, 1955
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Rectification Properties of Metal Semiconductor ContactsJournal of Applied Physics, 1955
- The Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier TransistorProceedings of the IRE, 1953
- Photoelectromagnetic and Photodiffusion Effects in GermaniumProceedings of the Physical Society. Section B, 1953
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953
- Uber Die anodische Auflösung des GermaniumsZeitschrift für anorganische und allgemeine Chemie, 1952