Temperature Dependent Phonon Shifts in Single-Layer WS2
- 6 January 2014
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 6 (2), 1158-1163
- https://doi.org/10.1021/am404847d
Abstract
Atomically thin two-dimensional tungsten disulfide (WS2) sheets have attracted much attention due to their potential for future nanoelectronic device applications. We report first experimental investigation on temperature dependent Raman spectra of single-layer WS2 prepared using micromechanical exfoliation. Our temperature dependent Raman spectroscopy results shows that the E(1)2g and A1g modes of single-layer WS2 soften as temperature increases from 77 to 623 K. The calculated temperature coefficients of the frequencies of 2LA(M), E(1)2g, A1g, and A1g(M) + LA(M) modes of single-layer WS2 were observed to be -0.008, -0.006, -0.006, and -0.01 cm(-1) K(-1), respectively. The results were explained in terms of a double resonance process which is active in atomically thin nanosheet. This process can also be largely applicable in other emerging single-layer materials.This publication has 33 references indexed in Scilit:
- Superior Field Emission Properties of Layered WS2-RGO NanocompositesScientific Reports, 2013
- Temperature-dependent phonon shifts in monolayer MoS2Applied Physics Letters, 2013
- Identification of individual and few layers of WS2 using Raman SpectroscopyScientific Reports, 2013
- Electrical control of neutral and charged excitons in a monolayer semiconductorNature Communications, 2013
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronicsNature Nanotechnology, 2012
- Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated TransistorsNano Letters, 2012
- GaS and GaSe Ultrathin Layer TransistorsAdvanced Materials, 2012
- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si SubstratesAdvanced Functional Materials, 2012
- Graphene transistorsNature Nanotechnology, 2010
- MoS2 and WS2 Analogues of GrapheneAngewandte Chemie, 2010