Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
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- 1 June 2012
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 336 (6085), 1140-1143
- https://doi.org/10.1126/science.1220527
Abstract
Updating the Triode with Graphene: In early electronics, the triode—a vacuum device that combined a diode and an electrical grid—was used to control and amplify signals, but was replaced in most applications by solid-state silicon electronics. One characteristic of silicon-metal interfaces is that the Schottky barrier created—which acts as a diode—does not change with the work function of the metal—the Fermi level is pinned by the presence of surface states. Yang et al. (p. 1140 , published online 17 May) now show that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters.Keywords
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