Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates
- 30 November 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (22)
- https://doi.org/10.1063/1.3268788
Abstract
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.Keywords
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