Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies
Open Access
- 1 July 2015
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.Keywords
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