Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy
- 31 December 2008
- journal article
- Published by Elsevier BV in Microelectronics Journal
- Vol. 39 (12), 1542-1544
- https://doi.org/10.1016/j.mejo.2008.03.002
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
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