A 0.12 mm$^{2}$ 7.4 $\mu$W Micropower Temperature Sensor With an Inaccuracy of $\pm$0.2$^{\circ}$C (3$\sigma$) From $-$30$^{\circ}$C to 125$^{\circ}$C
- 23 May 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 46 (7), 1693-1700
- https://doi.org/10.1109/jssc.2011.2144290
Abstract
This paper describes the design of a CMOS smart temperature sensor intended for RFID applications. The PNP-based sensor uses a digitally-assisted readout scheme that reduces the complexity and area of the analog circuitry and simplifies trimming. A key feature of this scheme is an energy-efficient two-step zoom ADC that combines a coarse 5-bit SAR conversion with a fine 10-bit ΣΔ conversion. After a single trim at 30°C, the sensor achieves an inaccuracy of ±0.2°C (3σ) from -30°C to 125°C. It also achieves a resolution of 15 mK at a conversion rate of 10 Hz. The sensor occupies only 0.12 mm2 in a 0.16 μm CMOS process, and draws 4.6 μA from a 1.6 V to 2 V supply. This corresponds to a minimum power dissipation of 7.4 μW, the lowest ever reported for a precision temperature sensor.Keywords
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