Progress in SiC: from material growth to commercial device development
- 30 July 1999
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 61-62, 1-8
- https://doi.org/10.1016/s0921-5107(98)00437-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 1.4 kV 4H-SiC UMOSFET with low specific on-resistancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Growth of SiC by ?Hot-Wall? CVD and HTCVDPhysica Status Solidi (b), 1997
- Kinetics and identifiability of intramolecular two-state excited-state processes with added quencher: global compartmental analysis of the fluorescence decay surfaceThe Journal of Physical Chemistry, 1993
- The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applicationsProceedings of the IEEE, 1991
- Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and DiamondJournal of Applied Physics, 1964