The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source
- 30 September 2001
- journal article
- Published by Elsevier BV in Microelectronics Journal
- Vol. 32 (9), 769-777
- https://doi.org/10.1016/s0026-2692(01)00039-8
Abstract
No abstract availableKeywords
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