Experimental evaluation of impact ionization coefficients in GaN
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (12), 608-610
- https://doi.org/10.1109/55.806100
Abstract
The impact ionization coefficient of electrons (/spl alpha//sub n/) in GaN is determined as a function of the electric field strength from gate-current analysis in the prebreakdown regime of AlGaN/GaN heterojunction field effect transistors (HJFETs). The experimentally obtained /spl alpha//sub n/, where the assumed effective length of the high electric field is precisely defined since its upper bound is closely limited due to the small gate-drain separation, agrees with that extrapolated from Monte Carlo simulation. It is experimentally confirmed that the breakdown field of GaN is higher than that of GaAs by a factor of about eight.Keywords
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