Si–Ge–Sn alloys: From growth to applications
Top Cited Papers
- 1 March 2016
- journal article
- Published by Elsevier BV in Progress in Crystal Growth and Characterization of Materials
- Vol. 62 (1), 1-39
- https://doi.org/10.1016/j.pcrysgrow.2015.11.001
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Synthesis and optical properties of Sn-rich Ge1–x–ySixSny materials and devicesThin Solid Films, 2014
- Tunnel field-effect transistors as energy-efficient electronic switchesNature, 2011
- Academic and industry research progress in germanium nanodevicesNature, 2011
- Nanometre-scale electronics with III–V compound semiconductorsNature, 2011
- Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsMicroelectronic Engineering, 2011
- Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on siliconApplied Physics Letters, 2010
- Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substratesMicroelectronic Engineering, 2005
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Photoluminescence of AlxGa1−xAs alloysJournal of Applied Physics, 1994
- Gray Tin Single CrystalsJournal of Applied Physics, 1958