Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
- 17 June 2005
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 80, 26-29
- https://doi.org/10.1016/j.mee.2005.04.040
Abstract
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This publication has 1 reference indexed in Scilit:
- Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricApplied Physics Letters, 2004