Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution
- 1 March 1991
- journal article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 20 (3), 231-235
- https://doi.org/10.1007/bf02651898
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Defect-free silicon film on SiO/sub 2/ formed by zone melting recrystallization with high scanning speedIEEE Transactions on Electron Devices, 1990
- Study of the solidification front of Si films in lamp zone melting controlled by patterning the underlying SiO2Journal of Applied Physics, 1986
- A comparison of fine-dimension silicon-on-sapphire and bulk-silicon complementary MOS devices and circuitsIEEE Transactions on Electron Devices, 1985
- Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator FilmsMRS Proceedings, 1985
- Reduced Subboundary Misalignment in SOI Films Scanned at Low VelocitiesMRS Proceedings, 1985
- FIPOS (Full Isolation by Porous Oxidized Silicon) technology and its application to LSI'sIEEE Transactions on Electron Devices, 1984
- Graphite-strip-heater zone-melting recrystallization of Si filmsJournal of Crystal Growth, 1983
- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978