C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

Abstract

Buried SiO₂, layers were formed by oxygen-ion (¹⁴O⁺) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.