Physical modelling of the melt flow during large-diameter silicon single crystal growth
- 1 September 2003
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 257 (1-2), 7-18
- https://doi.org/10.1016/s0022-0248(03)01376-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fieldsJournal of Crystal Growth, 2001
- Comparison of measurements and numerical simulations of melt convection in Czochralski crystal growth of siliconJournal of Crystal Growth, 2001
- Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystalsJournal of Crystal Growth, 2001
- Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fieldsJournal of Crystal Growth, 2001
- Analysis of turbulent flow in silicon melts by optical temperature measurementMaterials Science and Engineering B, 2000
- Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by x-ray radiography and large-scale computationProgress in Crystal Growth and Characterization of Materials, 1999
- Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of siliconJournal of Crystal Growth, 1999
- Experiments on the oscillatory convection of low Prandtl number liquid in Czochralski crystal growth under an axial magnetic fieldJournal of Crystal Growth, 1999
- Experiments on the oscillatory convection of low Prandtl number liquid in Czochralski configuration for crystal growth with cusp magnetic fieldJournal of Crystal Growth, 1997
- Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon CrystalsMRS Proceedings, 1997