Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields
- 1 August 2001
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 230 (1-2), 92-99
- https://doi.org/10.1016/s0022-0248(01)01321-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Hybrid finite-volume/finite-element simulation of heat transfer and melt turbulence in Czochralski crystal growth of siliconJournal of Crystal Growth, 2000
- Numerical modelling of the microscopic inhomogeneities during FZ silicon growthJournal of Crystal Growth, 1999
- Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental resultsJournal of Crystal Growth, 1997
- Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon CrystalsMRS Proceedings, 1997
- The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon CrystalsJournal of the Electrochemical Society, 1996
- Structure of temperature and velocity fields in the Si melt of a Czochralksi crystal growth systemJournal of Crystal Growth, 1995
- Numerical study of Czochralski growth of silicon in an axisymmetric magnetic fieldJournal of Crystal Growth, 1991
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- Toward an integrated analysis of czochralski growthJournal of Crystal Growth, 1989
- The mechanism of swirl defects formation in siliconJournal of Crystal Growth, 1982