Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

Abstract

The $800\mathrm{meV}$ photoluminescence band in indium nitride is excited under pulsed excitation conditions and is investigated as a function of temperature and time. Our results are consistent with a composite photoluminescence feature composed of two overlapping bands separated by an $\sim 10\mathrm{meV}$ splitting, with populations described by a thermal equilibrium model. Efficient nonradiative recombination channels rule both the temperature dependence of the time-integrated photoluminescence spectra and the recombination dynamics. At $10\mathrm{K}$ , the radiative recombination time is of the order of $300\mathrm{ns}$ , while the nonradiative recombination time, which is ruled by activation energy of $8\mathrm{meV}$ , is about $100\mathrm{ps}$ .