Optical band gap of indium nitride
- 1 May 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (9), 3241-3244
- https://doi.org/10.1063/1.336906
Abstract
Room-temperature optical absorption data in the 1.5–2.5-eV range are reported for indium nitride thin films prepared by reactive radio-frequency sputtering. The fundamental absorption edge in high-purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band-structure calculations. A significant Moss-Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.Keywords
This publication has 15 references indexed in Scilit:
- Electron mobility in indium nitrideElectronics Letters, 1984
- Mechanisms of reactive sputtering of indium II: Growth of indium oxynitride in mixed N2-O2 dischargesThin Solid Films, 1980
- Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 dischargesThin Solid Films, 1980
- Synthesis of III–V semiconductor nitrides by reactive cathodic sputteringThin Solid Films, 1976
- Some properties of inn films prepared by reactive evaporationJournal of Electronic Materials, 1974
- Band Structure and Reflectivity of GaNPhysica Status Solidi (b), 1974
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Infrared Absorption Spectrum of GermaniumPhysical Review B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954