The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN
- 1 April 1998
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 27 (4), 261-265
- https://doi.org/10.1007/s11664-998-0397-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodesJournal of Electronic Materials, 1997
- Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization annealApplied Physics Letters, 1996
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- Dry etch damage in InN, InGaN, and InAlNApplied Physics Letters, 1995
- Surface Damage on GaAs Etched Using a Multipolar Electron Cyclotron Resonance SourceJournal of the Electrochemical Society, 1994
- New technique for dry etch damage assessment of semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contactsJournal of Vacuum Science & Technology B, 1984
- Sputter Etching Effects on GaAs Schottky JunctionsJournal of the Electrochemical Society, 1982