A New High-Electron Mobility Monolayer Superlattice

Abstract

A new high electron mobility monolayer superlattice (MSL) which consists of alternating InAs and GaAs monolayers is proposed. Since the disorder scattering inherent in mixed crystals is absent in the MSL's, extremely high electron mobility can be expected. Critical periodicity (well width+barrier width) of the MSL is estimated to be 16 monolayers, below which electronic structure of the MSL becomes three dimensional. A calculation shows that the electron mobility of the MSL will be as high as 6×10⁵ cm²/V.sec at around 50 K for N _D-N _A=1×10¹⁴ cm^-3 and N _A/N _D=0.5, which is more than one order of magnitude higher than In_0.5Ga_0.5As alloy with the same impurity concentration.