Electron mobility inInxGa1−xAsalloys

Abstract

The conductivity and Hall coefficient of $n$-type alloys of ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{As} (0\mathrm{}\le x\le 0.25)$ have been measured at temperatures in the range 77-300 K. The crystals were grown from the vapor phase on insulating GaAs substrates and had electron concentrations of 1-6 × ${10}^{15}$ ${\mathrm{cm}}^{-3\mathrm{}}$. At room temperature the mobilities show no strong variation with alloy concentration. The data have been analyzed to determine the effect on the mobility of the scattering due to disorder, which is found to be of the order estimated from a simple theory due originally to Brooks. Below 120 K the scattering due to disorder dominates the phonon scattering for samples having more than 10-at.% InAs.