Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors
- 22 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (25), 3380-3382
- https://doi.org/10.1063/1.121610
Abstract
Asymmetric polarization switching of Pb(Zr,Ti)O 3 (PZT)thin films with different electrode configuration has been studied in (La,Sr)CoO 3 /Pb(Zr,Ti)O 3 /(La,Sr)CoO 3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO 3 and/or LaCoO 3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.This publication has 14 references indexed in Scilit:
- Ferroelectric field effect in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructuresIntegrated Ferroelectrics, 1997
- Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin-film capacitors with La-Sr-Co-O electrodesApplied Physics Letters, 1995
- Electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors with modified RuO2 bottom electrodesIntegrated Ferroelectrics, 1995
- Voltage offsets in (Pb,La)(Zr,Ti)O3 thin filmsApplied Physics Letters, 1995
- Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O3 Thin-Film CapacitorsJapanese Journal of Applied Physics, 1993
- Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitorsApplied Physics Letters, 1993
- Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial filmsApplied Physics Letters, 1993
- Integration of ferroelectric thin films into nonvolatile memoriesJournal of Vacuum Science & Technology A, 1992
- Integrated sol-gel PZT thin-films on Pt, Si, and GaAs for non-volatile memory applicationsFerroelectrics, 1990
- Ferroelectric MemoriesScience, 1989