Ab initioCalculation of the Intrinsic Spin Hall Effect in Semiconductors
- 8 June 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 94 (22), 226601
- https://doi.org/10.1103/physrevlett.94.226601
Abstract
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.
Keywords
This publication has 30 references indexed in Scilit:
- Spin-Hall effect in a disordered two-dimensional electron systemPhysical Review B, 2005
- Nonvanishing spin Hall currents in disordered spin-orbit coupling systemsPhysical Review B, 2005
- Observation of the Spin Hall Effect in SemiconductorsScience, 2004
- Semiclassical Spin Transport in Spin-Orbit-Coupled BandsPhysical Review Letters, 2004
- Suppression of the persistent spin Hall current by defect scatteringPhysical Review B, 2004
- Absence of vertex correction for the spin Hall effect in-type semiconductorsPhysical Review B, 2004
- Spin response of 2D electrons to a lateral electric fieldSemiconductors, 2001
- Corrections to density-functional theory band gapsPhysical Review B, 1998
- Manipulation of the spin-orbit coupling using the Dirac equation for spin-dependent potentialsPhysical Review B, 1996
- Linear methods in band theoryPhysical Review B, 1975