Absence of vertex correction for the spin Hall effect in-type semiconductors
- 24 June 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (24), 241202
- https://doi.org/10.1103/physrevb.69.241202
Abstract
We calculate an effect of spinless impurities on the spin Hall effect of the Luttinger model representing -type semiconductors. The self-energy in the Born approximation becomes diagonal in the helicity basis and its value is independent of the wave number or helicity. The vertex correction in the ladder approximation vanishes identically, in sharp contrast with the Rashba model. This implies that in the clean limit the spin Hall conductivity reproduces the value of the intrinsic spin Hall conductivity calculated in earlier papers.
Keywords
Other Versions
This publication has 21 references indexed in Scilit:
- Universal Intrinsic Spin Hall EffectPhysical Review Letters, 2004
- The Anomalous Hall Effect and Magnetic Monopoles in Momentum SpaceScience, 2003
- Dissipationless Quantum Spin Current at Room TemperatureScience, 2003
- Berry Phase in Magnetic SuperconductorsPhysical Review Letters, 2003
- Semiconductor Spintronics and Quantum ComputationPublished by Springer Science and Business Media LLC ,2002
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductorPhysical Review B, 2000
- Electrical spin injection in a ferromagnetic semiconductor heterostructureNature, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Quantal phase factors accompanying adiabatic changesProceedings of the Royal Society of London. Series A - Mathematical and Physical Sciences, 1984