High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing
- 3 September 2013
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 1 (44), 7333-7338
- https://doi.org/10.1039/c3tc31444h
Abstract
We studied the thin film heterojunction photodiode made of nickel oxide (NiO) and zinc oxide (ZnO) deposited by low cost energy-efficient sol–gel spin coating. The highly visible-transparent heterojunction photodiode with a smooth interface gives rise to a good photoresponse and quantum efficiency under ultra-violet (UV) light illumination. With an applied reverse bias of 5 V, a very impressive peak photo responsivity of 21.8 A W−1 and an external quantum efficiency (EQE) of 88% at an incident light wavelength of 310 nm were accomplished.This publication has 31 references indexed in Scilit:
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