Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

Abstract

We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm²/V s and an on/off $\mathrm{ratio}{\text{>10}}^6.$ These ZnO films had resistivity ${\text{∼10}}^5\hspace{0.17em}\mathrm{ohm cm},$ with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.