Optimal activation and diffusion paths of perfect events in amorphous silicon
- 15 December 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 62 (23), 15680-15685
- https://doi.org/10.1103/physrevb.62.15680
Abstract
Knowledge of the dynamics in amorphous silicon that occurs through a sequence of discrete activated events is essential to predict many of the associated physical and chemical properties. Using the recently introduced nudged elastic band method of Jónsson, Mills, and Jacobsen and a modified empirical Stillinger-Weber potential, we investigate, in detail, 802 perfect events generated with the activation-relaxation technique. We find that a large number of the high-energy events contain, in fact, two or more “subevents.” With this result included, the average barrier height goes down to about 3.0 eV, in line with experimental values and we also find that the bond-exchange mechanism of Wooten, Winer, and Weaire is, by far, the most important one for nondefect based dynamics in a-Si.Keywords
This publication has 14 references indexed in Scilit:
- Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics studyPhysical Review B, 2000
- Activated mechanisms in amorphous silicon: An activation-relaxation-technique studyPhysical Review B, 2000
- Identification of Relaxation and Diffusion Mechanisms in Amorphous SiliconPhysical Review Letters, 1998
- Traveling through potential energy landscapes of disordered materials: The activation-relaxation techniquePhysical Review E, 1998
- Amorphous Solid without Low Energy ExcitationsPhysical Review Letters, 1997
- Event-Based Relaxation of Continuous Disordered SystemsPhysical Review Letters, 1996
- Activation-energy spectrum and structural relaxation dynamics of amorphous siliconPhysical Review B, 1993
- Structural relaxation and defect annihilation in pure amorphous siliconPhysical Review B, 1991
- Diffusion without Vacancies or Interstitials: A New Concerted Exchange MechanismPhysical Review Letters, 1986
- Computer Generation of Structural Models of Amorphous Si and GePhysical Review Letters, 1985