Structural, electrical and optical properties of solution grown polycrystalline Cu1-xAgxSe thin films
- 14 June 1992
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 25 (6), 1019-1025
- https://doi.org/10.1088/0022-3727/25/6/021
Abstract
Polycrystalline thin films of Cu1-xAgxSe (0g from 1.4 to 1.37 eV and from 1.19 to 0.99 eV respectively. Other parameters such as absorption coefficient alpha , refractive index n, dielectric constant epsilon , and extinction coefficient k have also been computed from reflectance and transmittance spectra.This publication has 15 references indexed in Scilit:
- Characterization of p-CuInSe2 films for photovoltaics grown by a chemical deposition techniqueThin Solid Films, 1988
- Electrochemical and Thermodynamic Studies on Copper‐Silver‐Selenium SystemBerichte der Bunsengesellschaft für physikalische Chemie, 1986
- Electronic properties versus composition of thin films of CuInSe2Applied Physics Letters, 1984
- Electrical properties of Cu2−xSe thin films and their application for solar cellsThin Solid Films, 1980
- Growth and optical properties of CuGaTe2 thin filmsThin Solid Films, 1979
- The optical properties of CuInSe2 thin filmsThin Solid Films, 1978
- Simultaneous investigation of the crystal structure and electrical properties of crystallized germanium films by UHV in situ electron microscopyThin Solid Films, 1974
- Electronic and Ionic Conduction in (AgxCu1-x)2SeJournal of the Physics Society Japan, 1973
- Synthesis of Selenides and Tellurides. I. The Reduction of Selenites by HydrazineJournal of the American Chemical Society, 1958
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954