Electronic properties versus composition of thin films of CuInSe2
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6), 668-670
- https://doi.org/10.1063/1.95350
Abstract
The electrical properties of thin‐film CuInSe2 (<4 μm thick) deposited by coevaporation of the elements have been measured by different techniques as a function of material composition. A correlation between the Cu/In and Se/metal ratios versus majority‐carrier concentration is established. A qualitative scheme is developed, based on experiments, which predicts the majority‐carrier type and concentration in relation to the stoichiometry of the material.Keywords
This publication has 3 references indexed in Scilit:
- Impurity States in CuInSe2Crystal Research and Technology, 1981
- Electroluminescence and photovoltaic detection in Cd-implanted CuInSe2 p-n junction diodesApplied Physics Letters, 1975
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974