Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors
- 1 September 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (9R), 6860-6865
- https://doi.org/10.1143/jjap.45.6860
Abstract
No abstract availableKeywords
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