Macroscopic physics of the silicon inversion layer
- 15 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (15), 7959-7965
- https://doi.org/10.1103/physrevb.35.7959
Abstract
The diffusion-drift description of electrons and holes in a semiconductor is frequently used to obtain a detailed understanding of the physics and engineering of semiconductor devices. We show that, by generalizing the equation of state of the electron gas to include density-gradient dependences, this standard description can be extended to describe much of the quantum-mechanical behavior exhibited by strong inversion layers.Keywords
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