Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties
- 6 July 2009
- journal article
- review article
- Published by Wiley in Advanced Materials
- Vol. 21 (25-26), 2681-2702
- https://doi.org/10.1002/adma.200803754
Abstract
This paper summarizes some of the essential aspects of silicon‐nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon‐wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon‐wire growth via the vapor–liquid–solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs–Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.Keywords
This publication has 100 references indexed in Scilit:
- Controlled Synthesis of Millimeter-Long Silicon Nanowires with Uniform Electronic PropertiesNano Letters, 2008
- Solution−Liquid−Solid (SLS) Growth of Silicon NanowiresJournal of the American Chemical Society, 2008
- Ordered Arrays of 〈100〉-Oriented Silicon Nanorods by CMOS-Compatible Block Copolymer LithographyNano Letters, 2007
- Si nanowires synthesized with Cu catalystMaterials Letters, 2007
- Diameter control of Ti-catalyzed silicon nanowiresJournal of Crystal Growth, 2004
- Catalytic Growth of Silicon Nanowires Assisted by Laser AblationThe Journal of Physical Chemistry B, 2003
- Growth of Single Crystal Silicon Nanowires in Supercritical Solution from Tethered Gold Particles on a Silicon SubstrateNano Letters, 2002
- Mechanism of the silane decomposition. I. Silane loss kinetics and rate inhibition by hydrogen. II. Modeling of the silane decomposition (all stages of reaction)International Journal of Chemical Kinetics, 1985
- Morphology of silicon whiskers grown by the VLS-techniqueJournal of Crystal Growth, 1971
- The Thermal Decomposition of SilaneJournal of the American Chemical Society, 1936