The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements
- 1 June 2005
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 480-481, 336-340
- https://doi.org/10.1016/j.tsf.2004.11.087
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profilingJournal of Applied Physics, 2004
- CuGaSe2 solar cells prepared by MOVPESolar Energy Materials and Solar Cells, 2001
- Effect Of Grain Size, Morphology and Deposition Temperature on Cu(InGa)Se2 Solar CellsMRS Proceedings, 2001
- Hole transport and doping states in epitaxial CuIn1−xGaxSe2Journal of Applied Physics, 1998
- Large Grain Growth in Cu(In, Ga)Se 2 Thin Films with Band Gap of around 1.4 eV by Thermal Crystallization in Saturated Se VaporsJapanese Journal of Applied Physics, 1996
- The metastable changes of the trap spectra of CuInSe2-based photovoltaic devicesJournal of Applied Physics, 1996
- Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctionsJournal of Applied Physics, 1996
- Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gapJournal of Applied Physics, 1996
- Preparation and characterization of vacuum deposited CuInSe2 thin filmsSolar Cells, 1986
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982