Hole transport and doping states in epitaxial CuIn1−xGaxSe2
- 1 February 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (3), 1519-1526
- https://doi.org/10.1063/1.366860
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Gallium diffusion and diffusivity in CuInSe2 epitaxial layersApplied Physics Letters, 1996
- Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs SubstratesMRS Proceedings, 1995
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- Relation between electrical properties and composition in CuInSe2 single crystalsSolar Cells, 1990
- Transport properties of CuInSe2Solar Cells, 1986
- Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporationThin Solid Films, 1980
- Electrical Properties of p- and n-Type CuInSe2Single CrystalsJapanese Journal of Applied Physics, 1979
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950