Space-charge influenced-injection model for conduction in Pb(ZrxTi1−x)O3 thin films
- 15 September 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (6), 3216-3225
- https://doi.org/10.1063/1.368888
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- A review of high dielectric materials for DRAM capacitorsIntegrated Ferroelectrics, 1997
- Dielectric analysis of intergrated ceramic thin film capacitorsIntegrated Ferroelectrics, 1997
- Integrated ferroelectrics as a strategic deviceIntegrated Ferroelectrics, 1997
- Electrical conductivity in ferroelectric thin filmsMicroelectronic Engineering, 1995
- Electronic Conduction Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors: Part IJapanese Journal of Applied Physics, 1995
- Ferroelectric Schottky DiodePhysical Review Letters, 1994
- Current-voltage characteristics of ultrafine-grained ferroelectric Pb(Zr, Ti)O3 thin filmsJournal of Materials Research, 1994
- Negative differential resistivity in ferroelectric thin-film current-voltage relationshipsIntegrated Ferroelectrics, 1994
- A model for electrical conduction in metal-ferroelectric-metal thin-film capacitorsJournal of Applied Physics, 1994
- Electrical transport and dielectric breakdown in Pb(Zr,Ti)O3thin filmsFerroelectrics, 1994