Scanning tunneling microscopy of interface properties of Bi2Se3on FeSe
- 31 October 2012
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 24 (47), 475604
- https://doi.org/10.1088/0953-8984/24/47/475604
Abstract
We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi(2)Se(3) thin films, which can be ascribed to the charge transfer at the interface.Keywords
This publication has 30 references indexed in Scilit:
- The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin FilmsScience, 2012
- Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological InsulatorPhysical Review Letters, 2008
- Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technologyReviews of Modern Physics, 2001
- Moiré pattern in LEED obtained by van der Waals epitaxy of lattice mismatched WS2/MoTe2(0001) heterointerfacesSurface Science, 2000
- Nobel Lecture: The fractional quantum Hall effectReviews of Modern Physics, 1999
- Van der Waals epitaxy for highly lattice-mismatched systemsJournal of Crystal Growth, 1999
- Modulated STM images of ultrathinfilms grown on(0001) studied by STM/STSPhysical Review B, 1999
- Characterization of Epitaxial Films of Layered Materials Using Moiré Images of Scanning Tunneling MicroscopeJapanese Journal of Applied Physics, 1993
- New epitaxial growth method for modulated structures using Van der Waals interactionsSurface Science, 1992
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985