Characterization of Epitaxial Films of Layered Materials Using Moiré Images of Scanning Tunneling Microscope
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6S), 2945-2949
- https://doi.org/10.1143/jjap.32.2945
Abstract
Moiré-type modulated patterns have been observed in scanning tunneling microscope (STM) images of ultrathin epitaxial films of MoSe2 grown on MoS2 substrates, which arise from the existence of a very abrupt interface between two lattice-mismatched materials. Some distortions have been observed in the moiré patterns, reflecting the local lattice distortions in epitaxial films. It has been proven from a simple analysis that the moiré patterns enhance the distortions in the epitaxial films by a factor of 10 to 20, which enables the precise characterization of local lattice distortions in the epitaxial films.Keywords
This publication has 9 references indexed in Scilit:
- Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched systemThin Solid Films, 1992
- Scanning tunneling microscopy of monolayer graphite epitaxially grown on a TiC(111) surfaceSurface Science, 1991
- Growth of MoSe2 thin films with Van der Waals epitaxyJournal of Crystal Growth, 1991
- Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materialsApplied Physics Letters, 1991
- van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2Journal of Applied Physics, 1990
- Anomalous superperiodicity in scanning tunneling microscope images of graphiteApplied Physics Letters, 1990
- Ultrasharp interfaces grown with Van der Waals epitaxySurface Science, 1986
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985
- The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural propertiesAdvances in Physics, 1969