Silicon nitride films on silicon for optical waveguides
- 1 December 1977
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 16 (12), 3218-3222
- https://doi.org/10.1364/ao.16.003218
Abstract
Silicon nitride (Si3N4) thin film optical waveguides with propagation losses of less than 0.1 dB/cm for the TE0 mode at λ0 = 6328 Å have been successfully grown by low-pressure chemical vapor deposition. Silicon wafers 5 cm in diameter were used as substrates, and the Si3N4 was separated from the substrate by a steam-oxide SiO2 buffer layer. Propagation losses are examined for the various waveguide modes, and their dependence on waveguide parameters and wavelength are discussed and compared with exact calculations. Leakage into the silicon substrate is shown to be a major loss mechanism, especially at longer wavelengths and for higher mode numbers.Keywords
This publication has 7 references indexed in Scilit:
- Bending losses of dielectric slab optical waveguide with double or multiple claddings: theory; correctionApplied Optics, 1976
- Integrated optical silicon photodiode arrayApplied Optics, 1976
- A study of the chemical composition of MOS and MNOS structures by auger electron spectroscopyThin Solid Films, 1976
- The Scattering Centers in Dielectric Thin Film Optical WaveguidesJapanese Journal of Applied Physics, 1975
- Light Waves in Thin Films and Integrated OpticsApplied Optics, 1971
- Mode Conversion Caused by Surface Imperfections of a Dielectric Slab WaveguideBell System Technical Journal, 1969
- Optical thickness measurement of SiO2Si3N4 films on siliconSolid-State Electronics, 1967