A study of the chemical composition of MOS and MNOS structures by auger electron spectroscopy
- 1 March 1976
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 32 (2), 311-314
- https://doi.org/10.1016/0040-6090(76)90320-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Properties of silicon nitride and silicon oxynitride films prepared by reactive sputteringphysica status solidi (a), 1974
- Wetting of thin layers of SiO2 by waterApplied Physics Letters, 1974
- Stoichiometry of thin silicon oxide layers on siliconApplied Physics Letters, 1974
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Discharge of MNOS structuresSolid-State Electronics, 1973
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969