Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs
- 30 April 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (18), 183510
- https://doi.org/10.1063/1.2732821
Abstract
Structural and electrical properties of Hf O 2 and Hf O 2 ∕ Gd 2 O 3 gate stacks on p - Ga As substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd 2 O 3 between Hf O 2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that Hf O 2 ∕ Gd 2 O 3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks.Keywords
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