Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
Open Access
- 30 September 2013
- journal article
- Published by National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) in Semiconductor physics, quantum electronics and optoelectronics
- Vol. 16 (3), 300-309
- https://doi.org/10.15407/spqeo16.03.300
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETsPublished by Springer Science and Business Media LLC ,2011
- Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyondPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effectsSolid-State Electronics, 2007
- Coupling effect between the front and back interfaces in thin SOI MOSFETsMicroelectronic Engineering, 2005
- New and accurate method for electrical extraction of silicon film thickness on fully-depleted SOI and double gate transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Silicon-on-Insulator Technology: Materials to VLSIPublished by Springer Science and Business Media LLC ,2004
- Highly suppressed short-channel effects in ultrathin SOI n-MOSFETsIEEE Transactions on Electron Devices, 2000
- Electrical Characterization of Silicon-on-Insulator Materials and DevicesPublished by Springer Science and Business Media LLC ,1995
- Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET'sIEEE Electron Device Letters, 1994
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983