Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
- 23 February 2007
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 51 (2), 239-244
- https://doi.org/10.1016/j.sse.2007.01.016
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Correct biasing rules for virtual DG mode operation in SOI-MOSFETsIEEE Transactions on Electron Devices, 2004
- Frontiers of silicon-on-insulatorJournal of Applied Physics, 2003
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983