Temperature Influence on Electrical Properties of Sb–Te Phase-Change Material

Abstract
Temperature dependent electrical properties of two typical phase-change Sb–Te stoichiometric compositions (Sb2Te3 and Sb3Te) were investigated. In situ resistance measurement and Hall measurement were employed to follow the crystallization process. Sb3Te has a steep drop of resistance near crystallization temperature, whereas Sb2Te3 exhibits a continuous crystallization behavior. In addition, Sb3Te shows higher thermal stability and larger resistance contrast compared with Sb2Te3. The causation for decrease of resistance was analyzed. For Sb3Te, the drop of resistance is mainly contributed by the increase of carrier density. While for Sb2Te3, the increase of mobility has dominant influence on the drop of resistance.