Phase change random access memory cell with superlattice-like structure
- 20 March 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (12), 122114
- https://doi.org/10.1063/1.2181191
Abstract
A superlattice-like structure (SLL) incorporating two nonpromising phase change materials was applied to phase change random access memory (PCRAM) cell. A properly designed SLL structure could balance both the phase change speed and stability of a PCRAM. Moreover, SLL PCRAM cells exhibited lower programming current and fast working time of . The main reason for the excellent performances is due to the much lower thermal conductivity of the SLL material compared to that of bulk materials. The thermal conductivity of eight SLL layers cycle was found to be smaller than 30% of that of single layer material.
Keywords
This publication has 13 references indexed in Scilit:
- Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlatticesPhysical Review B, 1998
- An X-ray study of the mixed-layered compounds of (GeTe)n (Sb2Te3)m homologous seriesJournal of Alloys and Compounds, 1998
- Thermal conductivity and heat transfer in superlatticesApplied Physics Letters, 1997
- Temperature dependence of thermophysical properties of GaAs/AlAs periodic structureApplied Physics Letters, 1995
- Thermoelectric figure of merit of superlatticesApplied Physics Letters, 1994
- Thermal properties of AlAs/GaAs superlatticesApplied Physics Letters, 1987
- A bird's-eye view on the evolution of semiconductor superlattices and quantum wellsIEEE Journal of Quantum Electronics, 1986
- Thermal conductivity of superlatticesPhysical Review B, 1982
- Amorphous Versus Crystalline GeTe Films. II. Optical PropertiesJournal of Applied Physics, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968