Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor
- 30 April 2002
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 237-239, 1206-1212
- https://doi.org/10.1016/s0022-0248(01)02173-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe DissociationJapanese Journal of Applied Physics, 2001
- Characterization of 4H-SiC Epilayers Grown at a High Deposition RateMaterials Science Forum, 2001
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial GrowthJapanese Journal of Applied Physics, 2000
- LPCVD Growth and Structural Properties of 4H-SiC Epitaxial LayersMaterials Science Forum, 2000
- Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth DevelopmentsMaterials Science Forum, 2000
- SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactorJournal of Crystal Growth, 1999
- Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor DepositionMaterials Science Forum, 1998
- 5.5 kV Bipolar Diodes From High Quality CVD 411-SiCMRS Proceedings, 1998
- Growth of SiC by ?Hot-Wall? CVD and HTCVDPhysica Status Solidi (b), 1997
- Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)Journal of Applied Physics, 1994