Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD
- 23 March 2004
- journal article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 10 (2), 83-89
- https://doi.org/10.1002/cvde.200306282
Abstract
Thin films of praseodymium oxide have been deposited by liquid injection MOCVD using the volatile praseodymium alkoxide, [Pr(mmp)3] (mmp = 1‐methoxy‐2‐methyl‐2‐propanolate, OCMe2CH2OMe). The films were grown over a wide range of substrate temperatures (250–600 °C) and were found to consist predominantly of the Pr6O11 phase. Praseodymium silicate films containing ∼ 16–22 at.‐% Si were deposited over the temperature range 350–550 °C using [Pr{N(SiMe3)2}3] in the absence of any additional Si source.Keywords
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