Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD

Abstract
Thin films of praseodymium oxide have been deposited by liquid injection MOCVD using the volatile praseodymium alkoxide, [Pr(mmp)3] (mmp = 1‐methoxy‐2‐methyl‐2‐propanolate, OCMe2CH2OMe). The films were grown over a wide range of substrate temperatures (250–600 °C) and were found to consist predominantly of the Pr6O11 phase. Praseodymium silicate films containing ∼ 16–22 at.‐% Si were deposited over the temperature range 350–550 °C using [Pr{N(SiMe3)2}3] in the absence of any additional Si source.