Electrical transport in n-type semiconducting Ge120BixSe70−xTe10 glasses
- 1 March 1980
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 37 (1), 23-30
- https://doi.org/10.1016/0022-3093(80)90475-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Preparation of n-type semiconducting Ge20Bi10Se70 glassApplied Physics Letters, 1979
- The effect of charged additives on the carrier concentrations in lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- Thermoelectric Power of Si–As–Te and Ge–As–Te GlassesJapanese Journal of Applied Physics, 1977
- The increase in the conductivity of chalcogenide glasses by the addition of certain impuritiesPhilosophical Magazine, 1976
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Seebeck coefficient in amorphous chalcogenide filmsJournal of Non-Crystalline Solids, 1972
- The crystal structure and properties of the group VB to VIIB elements and of compounds formed between themJournal of Physics and Chemistry of Solids, 1958
- Chemical bonding in bismuth tellurideJournal of Physics and Chemistry of Solids, 1958